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New subcircuit for ESD snapback simulation We take the advantage of the... | Download Scientific Diagram
Bipolar effects in snapback mechanism in advanced n-FET transistors under high current stress conditions
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Mix‐mode forward‐biased diode with low clamping voltage for robust ESD applications - Qi - 2020 - Electronics Letters - Wiley Online Library
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TLP measurement of ESD Protection Devices - iST-Integrated Service Technology - TLP measurement of ESD Protection Devices
The dangers of deep snap-back ESD circuit-protection diodes - Analog - Technical articles - TI E2E support forums
Bipolar effects in snapback mechanism in advanced n-FET transistors under high current stress conditions
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Measured IV-curve and simplified model for ESD-protection elements with... | Download Scientific Diagram
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