Double Snapback Characteristics in High-Voltage nMOSFETs and the Impact to On-Chip ESD Protection Design
![TLP measurement of ESD Protection Devices - iST-Integrated Service Technology - TLP measurement of ESD Protection Devices TLP measurement of ESD Protection Devices - iST-Integrated Service Technology - TLP measurement of ESD Protection Devices](https://www.istgroup.com/en/wp-content/uploads/2017/07/Service_FA_esd-tlp_03.jpg)
TLP measurement of ESD Protection Devices - iST-Integrated Service Technology - TLP measurement of ESD Protection Devices
![Modeling MOS snapback and parasitic bipolar action for circuit-level ESD and high current simulations | Semantic Scholar Modeling MOS snapback and parasitic bipolar action for circuit-level ESD and high current simulations | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/a4bb9ffde2252a6d6f877188410ad5e10e2d55d4/2-Figure2-1.png)
Modeling MOS snapback and parasitic bipolar action for circuit-level ESD and high current simulations | Semantic Scholar
![Measured IV-curve and simplified model for ESD-protection elements with... | Download Scientific Diagram Measured IV-curve and simplified model for ESD-protection elements with... | Download Scientific Diagram](https://www.researchgate.net/publication/26633929/figure/fig1/AS:310018692927491@1450925624371/Measured-IV-curve-and-simplified-model-for-ESD-protection-elements-with-snapback-behavior.png)